SrI2(Eu) | Scintillation Crystal

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SrI2(Eu) | Scintillation crystal is a new inorganic scintillation crystal that can be used in a variety of medical applications.

Description

SrI2(Eu) | Scintillation Crystal is a new inorganic scintillation crystal. It has excellent performances in light yield, energy resolution, and energy response. In addition, with no background radiation it can be used for element isotope discrimination, medical imaging, and can be used in safety inspection areas.

Technical Specifications

Diameter

~25mm

Cylindrical High

~50mm

Density

4.6cm3

Decay Time

~1100ns

Wavelength of Maximum Emission

435nm

Energy Resolution

<3.0% (Cs-137)

Light Output

~300% (of NaI(Tl) for γ-rays)

Non-Proportionality

~2%(60-1274keV)

Capsulation

Seal

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TeO2 | Piezo-Electrical Crystal

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TeO2 | Piezo-Electrical Crystal is an excellent acousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation, and slow propagation velocity along the [110] direction.

Description

TeO2 | Piezo-Electrical Crystal is an excellent acousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation, and slow propagation velocity along the [110] direction. The resolution of AO devices made of TeO2 crystals is several levels greater than others. It consists of yellow and white fine crystalline powder and when heated, it melts to a dark yellow. It is not water soluble, and the melting and boiling point is 733°C and 1260°C, respectively.

 

MAIN APPLICATIONS

  • Preparation for AO rotators, modulators, resonators, tuning filters and other AO devices
  • Astronomy field
  • Remote sensing field
  • Laser publishing field
  • Laser recorder field
  • Etc.

 

 

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Trans-PET® Discoverist 80 | Small-Animal PET Scanner

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Trans-PET® BioCaliburn® | Small-Animal PET Scanner is a high-sensitivity all-digital PET system that images mice and rats.

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Technical Specifications

Number of Detectors

12

Crystal

LYSO

Pixel Size

1.9 x 1.9 x 13 mm³

Number of Crystals

8112

Photodetector

PSPMT

Number of Photodetectors

48

Ring Diameter

9.2 cm

Transversal FOV

6.5 cm

Axial FOV

10.6 cm

Sensitivity

8.0%

Spatial Resolution

1.0 mm

Timing Resolution

1.5 ns

Energy Resolution

15%

Imaging Subjects

Mouse, Rat

Power Supply

110–220 V

Operating Temperature

50–104 °F (10–40 °C)

Relative Humidity

30–75%

Atmospheric Pressure

700–1060 hPa

FCC Compliance

CISPR PUB. 22, FCC Part 15

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Tubular Digital | Multichannel Pulse Amplitude Analyzer

Tubular Digital | Multichannel Pulse Amplitude Analyzer is a set of high-performance tubular digital multichannel pulse amplitude analyzers based on multiple communication interfaces (USB or Ethernet).

Description

Tubular Digital | Multichannel Pulse Amplitude Analyzer is a set of high-performance tubular digital multichannel pulse amplitude analyzers based on multiple communication interfaces (USB or Ethernet). It can match scintillator detectors such as NaI(Tl) and LaBr3(Ce) and connect photomultiplier tubes (PMTs) with commonly used 8 or 10-stage structures.

 

KEY FEATURES

  • Wide adaptability
  • Compact structure
  • Convenient and flexible operation
  • Built-in digital oscilloscope
  • External temperature sensor
  • Matching gamma spectrum measurement and analysis software

 

MAIN APPLICATIONS

  • Nuclear power
  • The nuclear industry
  • Environmental protection
  • Medical treatment
  • Health and epidemic prevention
  • The chemical industry

Technical Specifications

Scope of application

PMT of 8 or 10-stage structures

Consumption

<1.5W

HV output

0~±1250V

Conversion gain

set to 1k, 2k, and 4k channels

ADC resolution

12 Bit

ADC sampling frequency

20/40/65 MHz

Integral nonlinearity

<±0.05%

Differential nonlinearity

<±1%

Maximum input pulse frequency

500kcps

Maximum channel capacity N_max

N_max= 2^32-1

Working environment temperature

-20~60℃

Storage ambient temperature

-40~70℃

Dimensions

Φ67×110mm

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V3+YAG | Q-Switch Crystal

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V3+YAG | Q-Switch Crystal (Crystals of Yttrium-Aluminum Garnet (YAG) doped with three-valence vanadium V3+ in the tetrahedral position) is relatively new material for passive Q-switching.

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Description

V3+YAG | Q-Switch Crystal (Crystals of Yttrium-Aluminum Garnet (YAG) doped with three-valence vanadium V3+ in the tetrahedral position) is relatively new material for passive Q-switching. The Q-switching and mode-locking has been obtained with a number of active media such as YAG(Nd), KGW(Nd), and YVO4(Nd) under ash-lamp and laser diode pumping in the past years. YAG(V) has worked as an efficient Q-switch for lasers operating in the 1.0 to 1.5µm region. Additionally, the absorption band between 1.0 to 1.5µm is attributed to the 3A2 →3T2 transition of V3+ ion in the tetrahedral position of the garnet lattice and the concentration of V3+ in tetrahedral position is controlled by growth and annealing conditions.

 

ADVANTAGES

  • Good thermal conductivity
  • High damage threshold
  • Chemically stable

 

MAIN APPLICATIONS

  • Passive Q-switch at 1342nm and 1064nm
  • Diode-pumped solid-state lasers
  • Etc.

 

 

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XZP06A | Microwave Photodetector

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XZP06A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 6 GHz.

Description

Description

XZP06A is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 6 GHz. The optical input is supplied through a single-mode fiber. The photodetector is designed to operate over a wide range of wavelengths. The photodetector incorporates an internal bias tee that connects the detector chip to both the bias voltage input and the DC-coupled RF signal output.

Features

  • 6 GHz bandwidth with flat response
  • High responsivity
  • Low dark current
  • Unique on-chip integrated bias network
  • Well matched to 50 Ω
  • Multiple connector configurations: LC/SC/FC/MU

Technical Specifications

Operating Temperature

-40–185 °F (-40–85 °C)

Response Spectrum

1100–1650 nm

Active Diameter

60 µm

Responsivity

0.85 A/W

Optical Return Loss

30–35

Reverse Breakdown Voltage

10 V

Work Voltage

3.3/5 V

Dark Current

10 nA

3 dB Bandwidth

6-6.5 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

45–60 Ω

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XZP12A | Microwave Photodetector

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XZP12A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 12 GHz.

Description

XZP12A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 12 GHz. The optical input is supplied through a single-mode fiber. The photodetector is designed to operate over a wide range of wavelengths. The photodetector incorporates an internal bias tee that connects the detector chip to both the bias voltage input and the DC-coupled RF signal output.

 

FEATURES

  • 12 GHz bandwidth with flat response
  • High responsivity
  • Low dark current
  • Unique on-chip integrated bias network
  • Well matched to 50 Ω
  • Multiple connector configurations

Technical Specifications

Operating Temperature

-40–185 °F (-40–85 °C)

Response Spectrum

1100–1650 nm

Active Diameter

50 µm

Responsivity

0.9 A/W

Optical Return Loss

30–35

Reverse Breakdown Voltage

10 V

Work Voltage

3.3/5 V

Dark Current

10 nA

3 dB Bandwidth

10–15 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

45–60 Ω

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XZP12T | Microwave Photodetector

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XZP12T | Microwave Photodetector integrates a 12 Gbps PIN photodiode and a low-noise transimpedance amplifier (TIA) into a hermetic box module.

Description

XZP12T | Microwave Photodetector integrates a 12 Gbps PIN photodiode and a low-noise transimpedance amplifier (TIA) into a hermetic box module. The optical input is supplied through a single-mode fiber. The receiver is designed to operate at 14 Gbps optical transmission.

 

FEATURES

  • Typical 12 GHz bandwidth with flat response
  • High sensitivity
  • Well matched to 50 Ω

Technical Specifications

Operating Temperature

-4–185 °F (-20–85 °C)

Response Spectrum

1100–1650 nm

Responsivity

0.85 A/W

Optical Return Loss

30–35 dB

Max. Optical Input Power

1 mW

Supply Current

28–40 mA

Supply Voltage

3.0–3.6 V

Transimpedance Gain

3.4 kΩ

Limited Output Voltage Swing

140–150 mVₚₚ

3 dB Bandwidth

10–15 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

45–60 Ω

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XZP20A | Microwave Photodetector

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XZP20A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a bandwidth of 20 GHz.

Description

XZP20A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a bandwidth of 20 GHz. The optical input is supplied through a single-mode fiber. The photodetector is designed to operate over a wide range of wavelengths. The photodetector incorporates an internal bias tee that connects the detector chip to both the bias voltage input and the DC-coupled RF signal output.

 

FEATURES

  • 20 GHz bandwidth with flat response
  • High and linear responsivity
  • Low dark current
  • Unique on-chip integrated bias network
  • Well matched to 50 Ω
  • Multiple connector configurations

Technical Specifications

Operating Temperature

-40–185 °F (-40–85 °C)

Response Spectrum

1100–1650 nm

Active Diameter

20 µm

Responsivity

0.8 A/W

Optical Return Loss

30–35

Reverse Breakdown Voltage

10 V

Work Voltage

3.3/5 V

Dark Current

50 nA

3 dB Bandwidth

18–20 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

40–60 Ω

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XZP25A | Microwave Photodetector

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XZP25A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 25 GHz.

Description

XZP25A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 25 GHz. The optical input is supplied through a single-mode fiber. The photodetector is designed to operate over a wide range of wavelengths. The photodetector incorporates an internal bias tee that connects the detector chip to both the bias voltage input and the DC-coupled RF signal output.

 

FEATURES

  • 25 GHz bandwidth with flat response
  • High and linear responsivity
  • Low dark current
  • Unique on-chip integrated bias network
  • Well matched to 50 Ω
  • Multiple connector configurations

Technical Specifications

Operating Temperature

-40–185 °F (-40–85 °C)

Response Spectrum

1100–1650 nm

Active Diameter

20 µm

Responsivity

0.6 A/W

Optical Return Loss

30–35

Reverse Breakdown Voltage

10 V

Work Voltage

3.3/5 V

Dark Current

50 nA

3 dB Bandwidth

25–27 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

40–60 Ω

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XZP35A | Microwave Photodetector

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XZP35A | Microwave Photodetector is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a minimum bandwidth of 35 GHz.

Description

Description

XZP35A is a high-speed microwave photodetector designed for direct optical-to-electrical detection, providing a bandwidth of 35 GHz. The optical input is supplied through a single-mode fiber. The photodetector is designed to operate over a wide range of wavelengths. The photodetector incorporates an internal bias tee that connects the detector chip to both the bias voltage input and the DC-coupled RF signal output.

Features

  • 35 GHz bandwidth with flat response
  • High and linear responsivity
  • Low dark current
  • Unique on-chip integrated bias network
  • Well matched to 50 Ω
  • Multiple connector configurations

Technical Specifications

Operating Temperature

-40–185 °F (-40–85 °C)

Response Spectrum

1100–1650 nm

Active Diameter

14 µm

Responsivity

0.5 A/W

Optical Return Loss

30–35

Reverse Breakdown Voltage

10 V

Work Voltage

3.3/5 V

Dark Current

10 nA

3 dB Bandwidth

32-35 GHz

Low Frequency Cutoff

DC kHz

Output Resistance

45-55 Ω

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XZP43T | Microwave Photodetector

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XZP43T integrates a 30 Gbps PIN photodiode and a low-noise transimpedance amplifier (TIA) into a hermetic box module.

Description

Description

XZP43T integrates a 30 Gbps PIN photodiode and a low-noise transimpedance amplifier (TIA) into a hermetic box module. The optical input is supplied through a single-mode fiber. The receiver is designed to operate up to 43 Gbps optical transmission.

Features

  • Typical 28GHz bandwidth with flat response
  • High sensitivity
  • Well matched to 50 Ω

Technical Specifications

Operating Temperature

-4–185 °F (-20–85 °C)

Response Spectrum

1100–1650 nm

Responsivity

0.55 A/W

Optical Return Loss

30–35

Sensitivity

-10 dBm

Max. Optical Input Power

1-3 mW

Supply Current

70-100 mA

Supply Voltage

3.0-3.6 V

Transimpedance Gain

2 kΩ

Limited Output Voltage Swing

140-150 mVpp

3 dB Bandwidth

27 GHz

Low Frequency Cutoff

10-100 MHz

Output Resistance

95–105 Ω

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